IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
OptiMOS™2 Power-Transistor
Product Summary
Features
V DS
85
V
• N-channel, normal level
R DS(on),max (TO252)
16
mΩ
• Excellent gate charge x R DS(on) product (FOM)
ID
53
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 *
Type
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
PG-TO220-3
Marking
16CNE8N
16CNE8N
16CNE8N
16CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
53
T C=100 °C
38
I D,pulse
T C=25 °C
212
E AS
I D=53 A, R GS=25 Ω
107
Reverse diode dv /dt
dv /dt
I D=53 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
6
Gate source voltage3)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Pulsed drain current
2)
Avalanche energy, single pulse
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
Unit
A
mJ
kV/µs
±20
V
100
W
-55 ... 175
°C
55/175/56
J-STD20 and JESD22
2)
see figure 3
3)
Tjmax=150°C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max,
I D=53 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.07
page 2
2010-04-27
Parameter
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2430
3230
-
452
601
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
33
50
Turn-on delay time
t d(on)
-
15
22
Rise time
tr
-
14
21
Turn-off delay time
t d(off)
-
27
41
Fall time
tf
-
7
11
Gate to source charge
Q gs
-
14
18
Gate to drain charge
Q gd
-
8
13
-
15
21
V GS=0 V, V DS=40 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=26.5 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 5)
V DD=40 V, I D=53 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
36
48
Gate plateau voltage
V plateau
-
5.6
-
Output charge
Q oss
-
34
46
nC
-
-
53
A
-
-
212
-
1
1.2
V
-
110
-
ns
-
210
-
nC
V DD=40 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
T C=25 °C
V GS=0 V, I F=53 A,
T j=25 °C
V R=40 V, I F=I S,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 1.07
page 3
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
60
100
50
80
40
I D [A]
P tot [W]
1 Power dissipation
60
30
40
20
20
10
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
1 µs
10
2
10 µs
100
1 ms
DC
101
Z thJC [K/W]
I D [A]
100 µs
10 ms
0.2
0.1
10-1
100
single pulse
10-2
-1
10
0
10
1
10
2
V DS [V]
Rev. 1.07
0.05
0.02
0.01
10-1
10
0.5
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
250
50
10 V
8V
4.5 V
45
5V
200
40
35
7V
R DS(on) [mΩ]
I D [A]
150
6.5 V
100
30
5.5 V
25
20
6V
15
6V
10 V
50
10
5.5 V
5
5V
4.5 V
0
0
1
0
2
3
4
5
0
20
V DS [V]
40
60
40
60
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
200
80
150
60
g fs [S]
I D [A]
parameter: T j
100
50
40
20
175 °C
25 °C
0
0
0
2
4
6
8
Rev. 1.07
0
20
I D [A]
V GS [V]
page 5
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=53 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
40
4
35
3.5
30
3
25
2.5
V GS(th) [V]
R DS(on) [mΩ]
parameter: I D
98 %
20
15
610 µA
61 µA
2
1.5
typ
10
1
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
103
25 °C
102
175 °C
175 °C, 98%
I F [A]
C [pF]
Coss
25 °C, 98%
10
2
10
1
Crss
101
100
0
20
40
60
80
V DS [V]
Rev. 1.07
0
0.5
1
1.5
2
V SD [V]
page 6
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=53 A pulsed
parameter: T j(start)
parameter: V DD
100
12
40 V
10
20 V
25 °C
60 V
8
V GS [V]
I AS [A]
100 °C
150 °C
10
6
4
2
1
0
1
10
100
1000
0
10
20
30
40
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
100
V GS
Qg
V BR(DSS) [V]
95
90
V g s(th)
85
80
Q g(th)
Q sw
Q gs
75
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.07
page 7
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
PG-TO220-3: Outline
Rev. 1.07
page 8
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
PG-TO262-3-1 (I²PAK)
Rev. 1.07
page 9
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
PG-TO-263 (D²-Pak)
Rev. 1.07
page 10
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
PG-TO252-3: Outline
Rev. 1.07
page 11
2010-04-27
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.07
page 12
2010-04-27
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